| 摘要 |
PURPOSE:To effectively perform the evaluation of a semiconductive crystal ion implantation layer by an optical means, by a fiber Raman laser consisting of single wavelength oscillation laser and a fiber, a beam source and a means for spectrally detecting light transmitted through a specimen to be measured. CONSTITUTION:When the oscillation beam 2 of Nd:YAG laser 1 with a Q-switch is incident to a silica single mode fiber 3 having a length of about 1km, the greater part of pump beam with a wavelength of 1.06mum is distincted and radiation beam 4 having a continuous beam emitting spectrum in a long wavelength side appears. A monovalent Si-ion is implanted in a semiconductive crystal, for example, GaAs 5 in a dope amount of about 10-14cm<-3> to perform annealing and fiber emitting beam is subsequently coupled with the implantation layer 6 and guided beam 7 is spectrally measured by a measuring apparatus 8 to obtain an absorption curve. This transmitted guide beam is sensibly related to a damage degree and an annealing state and, by measuring spectral transmission characteristics, the recovery state of a lattice is determined. |
