| 摘要 |
Stabilization of the propagation of storage bits around the storage loops of a Vertical Bloch Line (VBL) memory is obtained by the vapor-deposition of a nickel-iron film over the VBL structure. The film has a composition range of 65-90% nickel and a thickness of 1,000 to 10,000 Angstroms, and is deposited in a vacuum of 10-4 to 10-6 Torr to provide parallel, periodic, magnetic stripe domains, and thus potential well domains, that have a periodicity in the range of 0.1 to 1 micron. The stripe domains are oriented perpendicular to the direction of data propagation and form potential wells along the elongated direction of the storage loops.
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