发明名称 PRODUCTION OF ALUMINUM NITRIDE SUBSTRATE
摘要 PURPOSE:To obtain an AIN substrate free from warpage and usable without applying mechanical polishing after calcination by placing a non-carbide substrate as a weight on a molded article of AIN added with a sintering assistant and placed in a vessel made of a non-carbide material, filling AIN powder into the vessel, calcining the content and further calcining in N2 gas stream. CONSTITUTION:An AlN molded article 8 is sandwiched between a pair of substrates 4 made of a non-carbide material in a calcination vessel 2 made of a non-carbide material and having a BN coating layer 1 on the inner wall. AIN powder 5 is filled in the vessel while applying the load of the substrate 4 to the molded article 8. The molded article 8 is subjected to primary calcination at 1700 deg.C and the obtained calcined AIN article T is put into a graphite vessel 6 and subjected to secondary calcination at 1800 deg.C in N2 gas stream under normal pressure to obtain the objective AIN substrate.
申请公布号 JPH02129076(A) 申请公布日期 1990.05.17
申请号 JP19880280678 申请日期 1988.11.07
申请人 FUJITSU LTD 发明人 MAKIHARA HIROSHI;UDAGAWA ETSURO
分类号 C04B35/64;C04B35/581 主分类号 C04B35/64
代理机构 代理人
主权项
地址