| 摘要 |
PURPOSE:To obtain a single crystal in high efficiency of consumption of electric power without causing agitation in a silicon melt by forming a silicon skull layer in the inside of a vessel using a specific induction coil as the vessel and pulling up a single crystal rod from the silicon melt in the vessel. CONSTITUTION:An induction coil for exerting electromagnetic field on a silicon is used in order to melt the silicon retained in the interior while generating heat and high-melting insulating material is applied to the inside of the induction coil to afford a melting vessel. The silicon is melted in the melting vessel and then a single crystal rod is pulled up from a silicon melt in the melting vessel in a state where a silicon skull layer is formed in the inside of vessel. In the production of the above-mentioned silicon single crystal, the melting vessel serves also as the induction coil and electromagnetic field formed in the induction coil exerts directly on the silicon in the melting vessel without passing through a crucible. Therefore, efficiency of consumption of electric powder is improved by about 2 times, compared with CZ method using a conventional electromagnetic melting. |
