| 摘要 |
PURPOSE:To prevent thermal deterioration and to reduce a cost by simultaneously baking a current collector electrode and an Al film, then forming a pn junction at a light receiving surface, and baking, after the electrode is formed, it. CONSTITUTION:Current collector electrodes are formed of conductive Ag pastes 11, 12 on a light receiving surface and an opposite side thereto, and an Al film 13 is so formed by a vacuum process as to partly expose the electrodes. After the electrodes are formed, the electrodes and the film 13 are simultaneously baked, and a pn junction is formed by a vacuum process at the light receiving surface side. Simultaneously, after the electrodes are formed of the pastes 11, 12, they are baked, a P-type Si substrate 10 formed with the electrodes on both side surfaces is half-dipped to be soldered to the electrode parts. Then, a thermal process may be conducted only once, and ohmic contact, adherence of the film 13 to the electrodes are eliminated by the surface oxide film. Thus, thermal deterioration is eliminated to reduce its cost. |
