| 摘要 |
PURPOSE:To suppress a reflectivity of an entire wavelength range and to improve a photoelectric conversion efficiency by covering part of a substrate with an insulator of a predetermined pattern when a p-n junction is formed, and then selectively crystal-growing it to form a waveshape in the section of the junction. CONSTITUTION:A silicon oxide thin film is formed on the (001) surface of an n-type GaAs substrate by a sputtering method. This is so processed as to become a stripe shape in parallel with the direction [110] of a GaAs substrate crystal by etching to form a mask. Then, the substrate is ultrasonic-cleaned with organic solvent, and then etched. It is dried with nitrogen, and loaded in a reaction furnace of an MOCVD device. Subsequently, an n-type GaAs base layer, a p-type GaAs active layer, and a window layer are grown. Zn is used as the p-type dopant and Se as the n-type one. After crystal growth is ended, it is removed from the furnace, and transferred to an element processing step. Since part of once reflected light can be confined, its reflectivity is reduced. |
