| 摘要 |
<p>PURPOSE:To realize the active matrix display device which can eventually be improved in reliability without causing any S-C leak when a defective picture element due to laser light radiation is corrected. CONSTITUTION:A gate bus branch 22 which projects toward a picture element electrode 41 is formed on a gate bus line 21 and made narrower from its branch part to a TFT31 formation part than any other part. A counter electrode is patterned and formed on a counter electrode side transparent insulating substrate to be stuck on the substrate where the picture element electrode 41 is formed. Once a spot defect is detected, the area 51 of the narrow-width part of the gate bus branch 22 is irradiated with laser light to disconnect the gate bus branch 22 from the gate bus line 21. Then the gate bus branch 22, and areas 52 and 53 of overlapping parts of a source electrode 31 and a drain electrode 33 are irradiated with laser light to electrically connect an upper and a lower conductor. Thus, the laser light irradiation is repeated three times as mentioned above to short-circuit the source bus line 23 and picture element electrode 41.</p> |
