发明名称 FORMATION OF MASK PATTERN
摘要 <p>PURPOSE:To provide the formation of the mask pattern which forms a mask material layer for thin film pattern formation by printing and prevents patterning precision from decreasing due to the peeling of the mask material layer and the penetration of an etchant. CONSTITUTION:When the mask pattern for forming a resist pattern on a substrate 15 to be processed where a thin film 15a to be patterned is formed is formed, resist 12 in a desired pattern is transferred to a roller 16 for printing and then resist 14 is transferred onto the resist 12; and the laminated resist 12 and resist 14 which are transferred to the roller 16 are printed on the thin film 15a.</p>
申请公布号 JPH0511270(A) 申请公布日期 1993.01.19
申请号 JP19910163088 申请日期 1991.07.03
申请人 TOSHIBA CORP 发明人 NAKAJIMA MITSUO;OTAGURO HIROSHI
分类号 G02F1/1343;G02F1/136;G02F1/1368 主分类号 G02F1/1343
代理机构 代理人
主权项
地址