| 摘要 |
The semiconductor protection device has a p+-n--p-n+ layer construction, and an n type impurity diffusion region is selectively formed in a surface portion of the pn junction. This n type impurity diffusion region is formed in a linear planar portion where substantially no electric field concentration is generated when a reverse voltage is applied to the pn junction formed between the n- type semiconductor region and the p type semiconductor region. Further, an electrode is provided in ohmic contact with both of the p type semiconductor region and the n+ type semiconductor region. This electrode is selectively made in contact with the p type semiconductor region at a position remote from the n type impurity diffusion region and adjacent to a curved planar portion of the pn junction where the electric field concentration tends to occur when a reverse voltage is applied to the pn junction formed between the n- type semiconductor region and the p type semiconductor region.
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