SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to make an activated voltage boosting circuit unaffected from non active one when one conductive line is driven with different voltages by at least two voltage boosting circuits. CONSTITUTION: The memory device includes at least one conductive line, a pre-charge circuit, a pumping circuit(14), a distributer and a boosting circuit(100). The pre-charge circuit charges the conductive line with a source voltage with response to a pre-charge signal. The pumping circuit pumps the source voltage. The distributer is coupled with the pumping circuit and the conductive line and transmits the voltage pumped by the pumping circuit to the conductive line with response to the first control signal. The boosting circuit is coupled with the conductive line, increases the voltage level of the conductive line which is pre-charged with response to the second control signal and the boosting circuit is decoupled with the conductive line by the first control signal during the pumped voltage is transmitted to the conductive line by way of the distributor.