METHOD FOR FORMING FINE CONDUCTION FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine conductive layer pattern of a semiconductor device is provided to improve the reliability of a semiconductor device by forming easily a fine conductive layer pattern. CONSTITUTION: The first conductive layer(12) and a sacrificial layer are formed on a substrate(11). The sacrificial layer is etched selectively to expose the first area of the first conductive layer(12) and a sacrificial layer pattern is formed thereby. An insulating layer spacer is formed at a side face of the sacrificial layer pattern. The second area of the first conductive layer(12) is exposed by removing the sacrificial layer pattern. The second conductive layer(15) is formed selectively on the first area and the second area of the first conductive layer(12). The insulating layer spacer is removed and the first conductive layer(12) is etched selectively by using the second conductive layer(15) as an etching mask pattern.