| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a surface-working device for electron release at high efficiency. SOLUTION: A nitride semiconductor, comprising AlxByGa1-x-yN (0<=x<=1, 0<=y<=1, where 0<=x+y<=1) or Al, Si or N, is provided on the surface of a probe 11, at least on the surface of a probe needle-like part 111. With the nitride semiconductor provided on the probe, an electric field required for electron release of material is about 1/100 of W, while a current value is 100 times that of the conventional technology, since the entire surface of water can be drawn in a very short time. With a first and a third surface working devices, the probe is flat, while a plurality of anodes comprised so that a desired region on a substrate is efficiently worked, requiring no fine movement device for moving the substrate.</p> |
