METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide technique for improving the yield of a semiconductor device by preventing cracks on a passivation film. SOLUTION: A silicon oxide film 32 is deposited on a semiconductor substrate 1 using plasma CVD method, and then an oxynitride film 33, having a relatively small stress of about 0 to 300 MPa, is deposited thereon by plasma CVD. Thereafter, a polyimide resin film 34 is deposited thereon to form the passivation film.