发明名称 APPARATUS AND METHOD FOR MANUFACTURE OF SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To execute a degassing treatment under optimum conditions, irrespective of whether the wiring constitution or the like of a semiconductor device is different. SOLUTION: A semiconductor chip 10 is heated by a heater 3; an exhaust gas component inside a chamber 2 for degassing is detected; and according to the detection result of a four-terminal mass filter 5, the heater 3 is controlled by a heating controller 6.
申请公布号 JP2002164339(A) 申请公布日期 2002.06.07
申请号 JP20000358682 申请日期 2000.11.27
申请人 SONY CORP 发明人 MIYAMORI YUUICHI
分类号 H01L21/31;H01L21/02;H01L21/316;(IPC1-7):H01L21/316 主分类号 H01L21/31
代理机构 代理人
主权项
地址