MOS TRANSISTOR WITH RECESSED GATE AND FABRICATING METHOD THEREOF TO CONTROL ROLLING-OFF OF THRESHOLD VOLTAGE AND SHORT CHANNEL EFFECT LIKE PUNCH-THROUGH

摘要

PURPOSE: A MOS(metal oxide semiconductor) transistor with a recessed gate is provided to control rolling-off of a threshold voltage and a short channel effect like punch-through by forming an isolation trench of a reverse trench type. CONSTITUTION: A semiconductor substrate is prepared. A trench isolation layer(370) for defining an active region is positioned in the semiconductor substrate wherein at least the lower part of the sidewall of the trench isolation layer has a negative slope. A recessed gate(750) is positioned in a predetermined region of the active region wherein the bottom surface of the recessed gate comes in contact with the negatively sloped sidewall of the trench isolation layer.