发明名称 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which is excellent in characteristics of foreign substances with time and also has good lithography characteristics, and a resist pattern forming method. <P>SOLUTION: The resist composition contains a resin component (A) of which the alkali solubility increases by the action of an acid and an acid generator component (B) which generates an acid upon exposure to light, wherein the resin component (A) contains a resin (A1) having a constitutional unit (a1) represented by formula (a1) and a constitutional unit (a2) represented by formula (a2) [wherein R<SP>1</SP>is an acid decomposable group represented by formula (I)], and wherein the resist composition further contains &gamma;-butyrolactone in addition to the resin component (A) and the acid generator component (B). <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008046242(A) 申请公布日期 2008.02.28
申请号 JP20060220005 申请日期 2006.08.11
申请人 TOKYO OHKA KOGYO CO LTD 发明人 HARADA NAONOBU;KAWANA DAISUKE
分类号 G03F7/039;C08L83/05;C08L83/07;G03F7/004;G03F7/075;H01L21/027 主分类号 G03F7/039
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