| 摘要 |
An etching method for forming a recess ( 220 ) having an opening dimension (R) of millimeter order in an object ( 212 ) to be etched such as a semiconductor wafer. A mask ( 214 ) having an opening corresponding to the recess ( 220 ) is formed on the object ( 212 ). The object ( 212 ) with the mask ( 214 ) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask ( 214 ) is the same as the material, for example, silicon of the object ( 212 ). Hence, the recess ( 220 ) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom ( 222 ).
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