发明名称 |
VLSI HOT-SPOT MINIMIZATION USING NANOTUBES |
摘要 |
The invention relates to a semiconductive device comprising a die with at least one defined hot-spot area lying in a plane on the die and a cooling structure comprising nanotubes such as carbon nanotubes extending in a plane different than the plane of the hot-spot area and outwardly from the plane of the hot-spot area. The nanotubes are operatively associated with the hot-spot area to decrease any temperature gradient between the hot-spot area and at least one other area on the die defined by a temperature lower than the hot-spot area. A matrix material comprising a second heat conducting material substantially surrounds the nanotubes and is operatively associated with and in heat conducting relation with the other area on the die defined by a temperature lower than the hot-spot area. The heat conductivity of the nanotubes is greater than the heat conductivity of the matrix material, with the distal ends of the nanotubes exposed to present a distal surface comprising the first heat conducting means for direct contact with a medium comprising a cooling fluid. The inventors also disclose processes for manufacturing and using the device and products produced by the processes. |
申请公布号 |
US2008316711(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080169458 |
申请日期 |
2008.07.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIMITRAKOPOULOS CHRISTOS DIMITRIOS;GEORGIOU CHRISTOS JOHN |
分类号 |
H05K7/20;H01L21/50 |
主分类号 |
H05K7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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