| 发明名称 |
Integrated BST microwave tunable devices using buffer layer transfer method |
| 摘要 |
A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.
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| 申请公布号 |
US7579621(B2) |
申请公布日期 |
2009.08.25 |
| 申请号 |
US20050230186 |
申请日期 |
2005.09.19 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
KIM IL-DOO;TULLER HARRY L. |
| 分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
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