发明名称 THREE DIMENSIONAL INTEGRATED CIRCUITS EMPLOYING THIN FILM TRANSISTORS
摘要 An integrated circuit which enables lower cost yet provides superior performance compared to standard silicon integrated circuits by utilizing thin film transistors (TFTs) fabricated in BEOL. Improved memory circuits are enabled by utilizing TFTs to improve density and access in a three dimensional circuit design which minimizes die area. Improved I/O is enabled by eliminating the area on the surface of the semiconductor dedicated to I/O and allowing many times the number of I/O available. Improved speed and lower power are also enabled by the shortened metal routing lines and reducing leakage.
申请公布号 WO2016099580(A2) 申请公布日期 2016.06.23
申请号 WO2015US00171 申请日期 2015.12.23
申请人 LUPINO, JAMES JOHN 发明人 LUPINO, JAMES JOHN;AGAN, TOMMY ALLEN
分类号 H01L27/22 主分类号 H01L27/22
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