Multi-gate device structure including a fin-embedded isolation region and methods thereof

摘要

A structure and method for implementation of high voltage devices within multi-gate device structures includes a substrate having a fin extending therefrom and a fin-embedded isolation region. In some examples, the fin-embedded isolation region includes an STI region. In some embodiments, the fin-embedded isolation separates a first portion of the fin from a second portion of the fin. Also, in some examples, the first portion of the fin includes a channel region. In various embodiments, a source region is formed in the first portion of the fin, a drain region is formed in the second portion of the fin, and an active gate is formed over the channel region. In some examples, the active gate is disposed adjacent to the source region. In addition, a plurality of dummy gates may be formed over the fin, to provide a uniform growth environment and growth profile for source and drain region formation.

主权项

1. A semiconductor device, comprising:
a substrate including a fin extending therefrom; a fin-embedded isolation region that separates a first portion of the fin from a second portion of the fin, wherein the first portion of the fin includes a channel region; a source region formed in the first portion of the fin and a drain region formed in the second portion of the fin; and an active gate formed over the channel region; wherein the active gate is disposed adjacent to a first side of the source region.