| 发明名称 | Semiconductor device and method for producing semiconductor device | ||
| 摘要 | A semiconductor device includes a pillar-shaped resistance-changing layer on a contact and a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer. A reset gate surrounds the reset gate insulating film, and the reset gate is electrically insulated from the pillar-shaped resistance-changing layer. | ||
| 申请公布号 | US9397142(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201514960706 | 申请日期 | 2015.12.07 |
| 申请人 | UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. | 发明人 | Masuoka Fujio;Nakamura Hiroki |
| 分类号 | H01L31/113;H01L29/06;H01L21/336;H01L27/24;H01L45/00;H01L29/66 | 主分类号 | H01L31/113 |
| 代理机构 | Brinks Gilson & Lione | 代理人 | Brinks Gilson & Lione |
| 主权项 | 1. A semiconductor device comprising: a pillar-shaped resistance-changing layer on a contact; a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer; and a reset gate that surrounds the reset gate insulating film, wherein the reset gate is electrically insulated from the pillar-shaped resistance-changing layer. | ||
| 地址 | Peninsula Plaza SG | ||