| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine transistor; or provide a transistor having less parasitic capacitance; or provide a transistor having high frequency characteristics; or provide a semiconductor device having the transistor.SOLUTION: A fine semiconductor device has an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator and a second insulator, in which the first conductor is embedded on a region between the second conductor and the third conductor via the first insulator.SELECTED DRAWING: Figure 1 |
