发明名称 METHOD FOR OPERATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device, a semiconductor device with a reduced circuit area, a memory element having favorable characteristics, a highly reliable memory element, or a memory element with increased storage capacity per unit volume.SOLUTION: A semiconductor device includes a capacitor and a switching element. The capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is positioned between the first electrode and the second electrode. The switching element includes a first terminal and a second terminal. The first terminal is electrically connected to the first electrode. The following steps are sequentially performed: a first step of turning on the switching element in a first period, a second step of turning off the switching element in a second period, and a third step of turning on the switching element in a third period after the second step.SELECTED DRAWING: Figure 1
申请公布号 JP2016139452(A) 申请公布日期 2016.08.04
申请号 JP20160009431 申请日期 2016.01.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TSUBUKI MASASHI;FUJITA MASAFUMI
分类号 G11C11/401;G11C11/404;G11C11/405;G11C11/56;H01L21/8242;H01L27/108;H01L29/786 主分类号 G11C11/401
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