| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitor where reduction of capacity due to aging is small, in a dielectric layer of a perovskite crystal structure of ABO(y≤0.995)having a columnar structure.SOLUTION: A thin film capacitor includes a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer contains a plurality of columnar crystals elongating in the normal direction to the electrode surface of the upper electrode layer. The columnar crystal has a perovskite crystal structure represented by ABO. The element A is at least one of Ba, Ca, Sr, Pb, and the element B is at least one of Ti, Zr, Sn, Hf. y≤0.995 is satisfied, and the dielectric layer contains 0.05-2.5 mol of Mg for ABO100 mol.SELECTED DRAWING: Figure 1 |
