发明名称 |
SAPPHIRE SUBSTRATE POLISHING METHOD AND SAPPHIRE SUBSTRATE OBTAINED |
摘要 |
PROBLEM TO BE SOLVED: To provide a sapphire substrate polishing method which can control a warpage shape of a sapphire substrate for epitaxial growth, which is used for a light emitting diode; and provide a sapphire substrate obtained.SOLUTION: A double-sided polishing method of a sapphire substrate comprises: a first process of performing lapping on both surfaces of a substrate 4 by a double-ended lapping device having a lower surface plate 1 and an upper surface plate 2; a second process of mirror polishing both surfaces; and a third process of performing single-side polishing only on a first surface to make a strained layer of a second surface become thicker than that of the first surface.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016139751(A) |
申请公布日期 |
2016.08.04 |
申请号 |
JP20150015280 |
申请日期 |
2015.01.29 |
申请人 |
SUMITOMO METAL MINING CO LTD |
发明人 |
SATO TOSHIO |
分类号 |
H01L21/304;B24B37/08;B24B37/10;B24B37/12;C30B25/18;C30B29/38 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|