发明名称 SAPPHIRE SUBSTRATE POLISHING METHOD AND SAPPHIRE SUBSTRATE OBTAINED
摘要 PROBLEM TO BE SOLVED: To provide a sapphire substrate polishing method which can control a warpage shape of a sapphire substrate for epitaxial growth, which is used for a light emitting diode; and provide a sapphire substrate obtained.SOLUTION: A double-sided polishing method of a sapphire substrate comprises: a first process of performing lapping on both surfaces of a substrate 4 by a double-ended lapping device having a lower surface plate 1 and an upper surface plate 2; a second process of mirror polishing both surfaces; and a third process of performing single-side polishing only on a first surface to make a strained layer of a second surface become thicker than that of the first surface.SELECTED DRAWING: Figure 1
申请公布号 JP2016139751(A) 申请公布日期 2016.08.04
申请号 JP20150015280 申请日期 2015.01.29
申请人 SUMITOMO METAL MINING CO LTD 发明人 SATO TOSHIO
分类号 H01L21/304;B24B37/08;B24B37/10;B24B37/12;C30B25/18;C30B29/38 主分类号 H01L21/304
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