发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a power semiconductor module that has a form which has wiring patterns laminated to achieve low inductance, achieves high heat radiation performance, and inhibits damage caused by a difference of heat expansion coefficients.SOLUTION: A power semiconductor module 100 includes: a first isolation layer 2; a first wiring pattern 33; a second isolation layer 4; a second wiring pattern 5; and a semiconductor element 7. The first wiring pattern 3 is formed in at least a part on the first isolation layer 2. The second isolation layer 4 is laminated on at least a part on the first wiring pattern 3. The second wiring pattern 5 is formed in at least a part on the second isolation layer 4 so as to include a portion overlapping with the first wiring pattern 3. The semiconductor element 7 is disposed on an area other than an area in which the second isolation layer 4 is formed in a plan view. The first isolation layer 2 and the second isolation layer 4 are formed by a ceramic material.SELECTED DRAWING: Figure 1
申请公布号 JP2016164919(A) 申请公布日期 2016.09.08
申请号 JP20150044532 申请日期 2015.03.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAMADA YOSHIKO;OKA SEIJI;NAKAYAMA YASUSHI;MORISAKI SHOTA
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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