| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a film carrier usable for a narrow-pitch and multi-pin device at a high yield as before, if a wiring design is made according to conventional etching rule. SOLUTION: A device comprises two arrays of alternately arranged outer and inner electrode pads 12A, 12B at the periphery of a semiconductor chip 11, leads 13 formed by etching in a configuration extending outwards to the semiconductor chip 11 from the outer electrode pads 12A and inwards to the chip 11 from the inner electrode pads 12B on a film carrier 10, and bumps 14 connected to the tops of the leads 13 on the film carrier 10. Thus, it is possible to improve the pitch of the electrode pads two times as much as before. |
