| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask for manufacturing a semiconductor device which is unlikely to be damaged, even if a film thickness in a transfer region is made small, and also to provide a method for manufacturing the mask. SOLUTION: A mask for the production of a semiconductor device includes a member 4 in a thin film shape, a member 3 in a piece supporting the thin-film member 4, and a member provided in the vicinity of a boundary between the members 4 and 3 for continuously changing the thickness in the vicinity of the boundary. Since the thickness of the mask extending from the mask thin film part to the piece part is changed continuously, stresses are not concentrated on the boundary between the thin-film and piece parts and the generation of damages can be suppressed. Further, by setting the thin-film member to be a P conductivity type, distortion is caused not by a pressure but by a tension, thus film damage is eliminated. |
