| 摘要 |
<p>1278838 Silicon nitride whiskers PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 3 Oct 1969 [5 Oct 1968] 48668/69 Heading C1A Filamentary silicon nitride crystals are grown on a substrate from a vapour phase containing silicon and nitrogen by vapour-liquidsolid growth wherein the liquid phase of the vapour-liquid-solid system is in the form of droplets on the substrate, wherein the solvent in the liquid phase is metal and wherein the partial pressure of the nitrogen in the vapour phase is such as to avoid deposition of free silicon from the liquid phase. The preferred solvent is an alloy. The solvent may be iron or an iron alloy, and may be formed from compounds which are reduced to the metal under the reaction conditions employed. The vapour phase of the system may contain hydrogen. The crystallization may be carried out at a temp. between 1000‹ and 1500‹ C. At least 20% by volume of the crystallizing atmos. may be nitrogen and said atmosphere may be at atmospheric pressure. The thickness of the filaments produced may be controlled by regulating the size of the droplets of the liquid phase which may be positioned on the substrate in a given pattern.</p> |
