发明名称 A PREFERENTIAL CRYSTAL ETCHING TECHNIQUE FOR THE FABRICATION OF MILLIMETER AND SUBMILLIMETER WAVELENGTH HORN ANTENNAS
摘要 A horn antenna including first and second substrates (100) having at least one first and at least one second shaped cavity formed in the first and second substrates (100), respectively. The horn shaped cavities taper from a narrow end and have a longitudinal axis along a plane parallel to a top surface of the first and second substrates (100). The second horn shaped cavity is disposed opposite the first horn shaped cavity and is a mirror image of the first horn shaped cavity. Internal surfaces of the first and second horn shaped cavities include a metalization layer. The horn antenna is fabricated by forming at least one mask having a longitudinally extending mask opening on the first and second substrates (100) and preferentially etching the first and second substrates (100) through the mask opening to form the first and second horn shaped cavities.
申请公布号 WO9847198(A3) 申请公布日期 1999.06.24
申请号 WO1998US05831 申请日期 1998.03.25
申请人 THE UNIVERSITY OF VIRGINIA PATENT FOUNDATION;KOH, PHILIP, J.;CROWE, THOMAS, W.;HESLER, JEFFREY, L.;WOOD, PERRY;BISHOP, WILLIAM;WEIKLE, ROBERT, M. 发明人 KOH, PHILIP, J.;CROWE, THOMAS, W.;HESLER, JEFFREY, L.;WOOD, PERRY;BISHOP, WILLIAM;WEIKLE, ROBERT, M.
分类号 B81C1/00;H01Q13/02 主分类号 B81C1/00
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