| 摘要 |
<p>A semiconductor element comprises the first conductive type first semiconductor layer (11) which has an exposed surface at the first surface side to contact with the first contact (21); the second conductive type second semiconductor layer (12) which forms the first PN junction J1, with the first semiconductor layer (11) and has an exposed surface at the first surface side to contact with the first contact (21); the first conductive type third semiconductor layer (13) which forms the second PN junction J2 with the semiconductor layer (12) and has an exposed surface at the second surface side; and the fourth semiconductor layer (14) which forms the third PN junction J3 with the third semiconductor layer (13) and has an exposed surface at the second surface side; wherein the exposed surface of the third semiconductor layer (13) includes the exposed surface faced substantially to the exposed surface of the second semiconductor layer (12) and is brought into ohmic contact with the third B contact (23b) and the exposed surface of the fourth semiconductor layer (14) includes the first part (14a) which is faced to the first semiconductor layer (11) and is brought into ohmic contact with the third A contact (23a) and the second part (14b) which is faced to the exposed surface of the second semiconductor layer (12) and is brought into ohmic contact with the second contact (22); and the first contact (21), the second contact (22), the third A contact and the third B contact are lead out.</p> |
