| 摘要 |
PURPOSE:To prevent generation of leak current which passes through a buried layer by providing impurity which diffuses to obtain an ohmic contact in a clad layer of double hetero junction construction before the buried layer is formed. CONSTITUTION:In a wafer, multilayers consisting of an n-InP buffer layer 4, an InGaAsP active layer 5, a p-InP clad layer 6 and a p-InGaAs gap layer 7 grown on an n-InP substrate 2 are formed. Then, on the main surface of the wafer, an ohmic contact layer 15 diffused with impurity Zn is formed. Next, a stripe like mask is formed on the main surface and under the mask, an inverted mesa construction stripe part 8 is formed. Later, buried multilayers 12 consisting of a blocking layer 9, a buried layer 10 and a buried gap layer 11 are formed on etched grooves. Consequently, the active layer 5 forms a buried hetero junction construction 13 in the interval with the buried layer 10.
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