| 摘要 |
PURPOSE:To improve the function of an element while preventing the memory in an inversion layer from breaking down by a method wherein a trap layer for arresting electrons is provided on the backside of a substrate corresponding at least to the inversion layer. CONSTITUTION:After forming an N<+> type diffusion layer 2 by normal process on the surface of a P type silicon substrate 1, the first and the second control electrodes 3, 5 are formed on the substrate 1 through the intermediary of a gate insulating film 4 and an insulating film 6. Successively after forming an interlayer insulating film on overall surface, the interlayer insulating film corresponding to the diffusion layer 2, the first and the second control electrodes 3, 5 is selectively removed to form a fetch wiring. Next after removing the oxide film on the backsise of the substrate 1, an amorphous layer 21 as a trap layer is formed on the backside of the substrate 1 by means of irradiating laser beams down to specified depth from the backside of the substrate 1 to produce a semiconductor device. |
