| 摘要 |
PURPOSE:To provide a semiconductor substrate which has a recrystallized silicon film of high crystallization quality on a insulating substrate, by using the material which has a linear heat expansion rate within the specified range as the insulating substrate. CONSTITUTION:A polycrystalline silicon film 2 is deposited on an insulating substrate 1 and a silicon dioxide film 3 is then covered thereon. If a wafer 5 is moved which is being placed on a carbon susceptor 4 which functions as a heater in a radio frequency induction heating process, the polycrystalline Si 2 melts like a belt which moves relatively as the wafer 5 moves and recrystallization caused by the so-called zone melting proceeds, when the polycrystalline Si 2 passes through the section 7 having a higher temperature over the melting point of Si. As the substrate 1, one which has a linear heat expansion rate close to that of Si, i.e., from 2X10<-6>-8X10<-6>/ deg.C, and has a high melting point, may be appropriately used. |
