TEMPERATURE COMPENSATED COMPLEMENTARY METAL-INSULATOR-SEMICONDUCTOR OSCILLATOR

摘要

A temperature compensated complementary metal-insulator-semiconductor oscillator receives a temperature independent reference voltage from an external source. The temperature independent reference voltage is attenuated and summed with a threshold voltage in order to bias a gate electrode of MOSFET. A bipolar p-n junction diode is connected to the MOSFET at a source electrode in order to bias the MOSFET with a temperature dependent forward voltage drop to compensate for temperature variations therein. The MOSFET controls a temperature independent current. A current mirror assembly receives the current and controls a Schmitt trigger oscillator. The Schmitt trigger oscillator generates a signal having a temperature independent constant period.