MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To manufacture an SOI (semiconductor on insulator) type semiconductor device with less defects and irregularities on the surface in excellent evenness in film thickness by a method wherein an amorphous semiconductor layer is turned into a single crystal one by solid phase epitaxy while removing the hydrogen in the amorphous semiconductor layer from the first and the second openings by performing the heat treatment. CONSTITUTION:An insulator 2 is formed on a semiconductor crystalline substrate 1 and then the first opening is formed in a part of the insulator 2 to expose the surface of the substrate 1. Then, an amorphous semiconductor layer 12 containing hydrogen is formed on the insulator 2 and the surface of exposed semiconductor crystalline substrate 1; a hydrogen removal preventive layer 13 is formed on the amorphous semiconductor layer 12; and the second opening 13a is formed on the hydrogen removal preventive layer 13. Next, the amorphous semiconductor layer 12 is turned into a single crystal one by solid phase epitaxy while removing the hydrogen in the amorphous semiconductor layer 12 from the first and the second openings by performing the heat treatment. Through these procedures, a single crystal semiconductor layer with less defects and no fine irregularities on the surface is excellent evenness in film thickness can be formed with excellent controllability.