METHOD FOR DEVELOPING RESIST

摘要

PURPOSE:To improve the sensitive of a resist and to improve the stability of development by developing the resist after exposing by using an org. solvent contg. water within the range of >=0.01 weight ratio and compatibility limit or below. CONSTITUTION:After polymethyl methacrylate (PMMA) is coated on an Si substrate to 0.5mum thickness, the coating is subjected to a heat treatment for 30min at 170 deg.C then to exposing with an electron beam at 28kV acceleration voltage, following which the coating is subjected to dip development for 1min at 23 deg.C by using a developing soln. formed by mixing 10g H2O in 500g methyl isobutyl ketone (MIBK). This developing method develops the resist after exposing by using the org. solvent contg. the water of >=0.01% weight ratio and the compatibility limit or below. The sensitivity of the resist is thereby improved and the finer pattern is formed.