| 摘要 |
PURPOSE:To obtain the manufacturing method of a I-III-VI compound semiconductor film wherein the generation of segregation of microscopic component is eliminated, the film surface can be smoothly formed, and composition controllability is excellent. CONSTITUTION:A Cu film is laminated to be 200Angstrom in thickness on a substrate of no.7059 Corning glass by a vacuum evaporation method. On said Cu film, an In2O3 film whose atomic ration is Cu:In=1:1 is laminated to be 5300Angstrom in thickness by a sputtering method. As the In2O3 target in the above sputtering method, a target is used which is sintered at 1400 deg.C after In2O3 powder is molded with pressure. Said lamination film is put in a reaction tube, the temperature is raised up to 400 deg.C at a rate of 5 deg.C/min in an N2 gas atmosphere. When the temperature reaches 400 deg.C, H2S and H2Se are so introduced that the flow rate mol ratio is H2S/(H2Se+H2S)=0.9. Two hours after, the above gas is changed to N2 gas, and cooling is performed down to the normal temperature. |
