发明名称 |
Etch stop layer using polymers for integrated circuits |
摘要 |
An etch stop layer (22) for permitting distinguishing between two similar layers (20, 24), such as two oxide layers, during etching is provided. The etch stop layer comprises a silicon-oxyhalide polymer, preferably a silicon-oxyfluoride polymer. Use of the polymer as an etch stop layer permits closer placement of metal conductor surfaces (12, 12') and contacts (14').
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申请公布号 |
US5395796(A) |
申请公布日期 |
1995.03.07 |
申请号 |
US19930002573 |
申请日期 |
1993.01.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HASKELL, JACOB D.;GUPTA, SUBHASH |
分类号 |
H01L21/3105;H01L21/311;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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