Nonvolatile, in particular flash-EEPROM, memory device

摘要

A memory (1) comprising a memory array (2), a row decoding unit (3), a column decoding unit (4), and a control unit (7); the memory array presents global bit lines (13) extending along the whole of the array (2) and connected to respective local bit lines (14), one for each of the sectors; a switch (15) is provided between the global bit lines (13) and each respective local bit line (14) to selectively connect a selected global bit line (13) and only one of the associated local bit lines (14); and the switches are controlled by local decoding units (17) over control lines (16), to address the sectors (S1-S12) independently and so perform operations (read, erase, write) simultaneously in two different sectors in different rows and columns. <IMAGE> <IMAGE>