| 摘要 |
PROBLEM TO BE SOLVED: To enable high speed operation by controlling a height of a potential barrier of a potential barrier layer by means of voltage to be impressed on a re-grown extra-thin gate region and by controlling carrier conduction from an extreme thin source region to an extreme thin drain region. SOLUTION: When a carrier from a source region 2, consisting of a high concentration impurity region, reaches a drain region 5 through a potential barrier 4, high-speed operation is performed since the utmost atomization reaching a drain with no collision with a crystal lattice at a carrier heat speed up to the drain is performed. Since the potential barrier 4 is controlled by an outer gate and source-drain bias voltage, further high speed can be achieved. Since the potential barrier 4 or tunnel probability of a tunnel implantation layer is controlled by outside gate voltage and source-drain bias voltage, further utmost high-speed performance can be exhibited. |
