| 摘要 |
PROBLEM TO BE SOLVED: To make the formation of a thick buffer layer between an SiON film and an Si single-crystal substrate unnecessary by forming a SiON film on the surface of the Si single-crystal substrate and a group III-V nitride crystal film on the SiON film. SOLUTION: After a single-crystal Si substrate (substrate) 4, carrying a natural oxide film formed on the surface, has been introduced into an introducing chamber A1, a substrate 4 is carried in a preparation chamber A2 and the water adsorbed in the substrate 4 is removed by heating the substrate 4 in a vacuum. Then the substrate 4 is carried into a deposition chamber A3, and an SiON film is formed by nitriding the natural oxide film by supplying an N-source from a supplying source C, while the substrate 4 is heated. After the formation of the SiON film, a crystal GaN film of a group III nitride, etc., is formed on the SiON film of the substrate 4 by simultaneously supplying a prescribed group III element source, etc., from supplying means B1-B5 and the N-source from the supplying means C. The lattice- mismatching rate of a crystal GaN film, etc., becomes nearly zero, and the crystallinity of the GaN film, etc., is improved. Therefore, even when the thickness of a buffer layer is insufficient, a high-quality crystal can be grown. |
