| 发明名称 |
SiC SEMICONDUCTOR ARRAY WITH ENHANCED CHANNEL MOBILITY |
| 摘要 |
An SiC channel area (2) of a semiconductor array comprises bumps (6) running parallel to each other which are formed by misoriented epitaxial growth on its surface (20). The electrical power flow in the channel area (2) is adjusted parallel to the bumps (6). Thus, high charge carrier mobility in the channel area (2) is achieved. |
| 申请公布号 |
WO9843299(A2) |
申请公布日期 |
1998.10.01 |
| 申请号 |
WO1998DE00738 |
申请日期 |
1998.03.12 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT;PETERS, DETHARD;SCHOERNER, REINHOLD;STEPHANI, DIETRICH |
发明人 |
PETERS, DETHARD;SCHOERNER, REINHOLD;STEPHANI, DIETRICH |
| 分类号 |
H01L29/749;H01L21/04;H01L21/337;H01L29/04;H01L29/06;H01L29/10;H01L29/12;H01L29/24;H01L29/739;H01L29/78;H01L29/808 |
主分类号 |
H01L29/749 |
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