Integrated circuit device and fabricating method thereof

摘要

An integrated circuit device includes a substrate (1, 2, 11) comprising a semiconductor or a dielectric material, and circuit elements (3, 5, or 6) and thermoplastic resin substance (120, 121, or 122) electrically connected to the circuit elements (3, 5, or 6) disposed on the substrate (1, 2, 11). Therefore, since variation in the configuration of the thermoplastic resin substance (120, 121, or 122) is quite small relative to those of the wire, variation in the parasitic inductance due to variation in the configuration is reduced, and uniformity and reproducibility of the high frequency characteristics of the integrated circuit device are enhanced. A method for fabricating an integrated circuit device includes forming circuit elements (3, 5, or 6) on a substrate (1, 2, 11) comprising a semiconductor or a dielectric material, and forming thermoplastic resin substance (120, 121, or 122) electrically connected with the circuit elements (3, 5, or 6). Therefore, since variation in the configuration of the thermoplastic resin substance (120, 121, or 122) is quite small with relative to those in the wires, variation in the parasitic inductance due to variation in the configuration is reduced, and uniformity and reproducibility of the high frequency characteristics of the integrated circuit device are enhanced.