发明名称 |
Conductive layer forming method using etching mask with direction <200> |
摘要 |
An electrode material layer of a WSi2/polysilicon lamination layer and a conductive material layer for antireflection made of TiN or TiON and containing the direction <200> are sequentially deposited on a gate insulating film. The conductive material layer is patterned through dry etching using a resist layer as a mask to leave a portion of the conductive material layer. The resist layer may be as thin as capable of patterning the conductive material layer. After the resist layer is removed, the electrode material layer is patterned through dry etching using the conductive material layer as a mask to leave a portion of the electrode material layer. A lamination of the left electrode material layer and conductive material layer is used as a gate electrode layer. A lamination of the resist layer and conductive material layer may be used as a mask.
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申请公布号 |
US6150250(A) |
申请公布日期 |
2000.11.21 |
申请号 |
US19980186811 |
申请日期 |
1998.11.05 |
申请人 |
YAMAHA CORPORATION |
发明人 |
TABARA, SUGURU;HIBINO, SATOSHI |
分类号 |
H01L21/027;H01L21/033;H01L21/28;H01L21/768;H01L29/49;(IPC1-7):H01L21/320;H01C21/476 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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