发明名称 Graded layer for use in semiconductor circuits and method for making same
摘要 Methods of forming a graded layer is disclosed. The graded layer transitions from one material to another material. The properties of these materials are chosen to optimize the interfaces on each side of the graded layer. Specifically, an improved transistor gate stack barrier layer may be formed by disposing an appropriate graded layer between a gate layer and an interconnect layer. In fact, the graded layer may obviate the use of the interconnect layer, as the top of the graded layer may include a highly conductive material. An improved integrated circuit interconnect structure may also be formed by grading the material composition of an interconnect layer.
申请公布号 US2002094652(A1) 申请公布日期 2002.07.18
申请号 US20020051768 申请日期 2002.01.18
申请人 AKRAM SALMAN;MEIKLE SCOTT G. 发明人 AKRAM SALMAN;MEIKLE SCOTT G.
分类号 H01L21/28;H01L21/768;H01L29/49;(IPC1-7):H01L21/336 主分类号 H01L21/28
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