| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device which improves the reliability of the semiconductor device, suppresses a warp due to an organic insulator and can solve a problem during a wafer process and after the termination of the wafer process. SOLUTION: A precursor 106 which has prescribed viscosity and which is to be changed to the prescribed organic insulator is applied on a semiconductor substrate 101 having a stepwise structure including step faces 107 and 111 and first and second flat faces 101a and 102a; and 102a and 103a connected to the upper/lower edges of the step faces. The precursor 106 is cured and is changed to the organic insulator. Reactive ion etching is performed, and parts existing on the first and second flat faces 101a and 102a; 102a and 103a in the organic insulator are removed. Then, side walls 108 and 109 are formed by leaving a part covering the step faces 107 and 111 in the organic insulator. |
