| 摘要 |
A semiconductor device structure and process for its fabrication includes a first layer of HDP oxide and an overlying layer of silicon oxynitride. Application of the HDP oxide to a pattern of metal structures fills gaps between the metal structures and allows for the void free deposition of the silicon oxynitride layer. The silicon oxynitride layer provides a hard outer coating to the passivation coating and is UV transparent so that, if necessary, non-volatile floating gate memory devices can be UV erased.
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