SEMICONDUCTOR MEMORY

摘要

PURPOSE:To reduce power consumption at the time of reading operation and under non-selecting state by a method wherein the reading operation is performed by making an MOSFET which supplies a predetermined bias voltage to a selected data line corresponding to the respective memory array or memory block to which the selected data line belongs. CONSTITUTION:As switching MOSFET's Q8-Q10 are in ON state when the level of a selection signal Y1 is high, memory information in two memory MOSFET's connected to data lines D10 and D01 is read out into common data lines CD1 and CD0. The memory MOSFET's which are provided between the selected data line D10 and a common source line CS0 and between the data line D01 and a common source line CS2 are made to be in non-operating state because switching MOSFET's Q6 and Q11 which correspond to the memory MOSFET's are turned OFF. Therefore, the potentials of the data lines D10 and D01 are determined in accordance with the memory information of two respective memory MOSFET's provided between the common source line CS1 and the data line D10 and between the common source line CS1 and the data line D01 respectively.